Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1994-07-12
1995-12-19
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365207, 365208, 327 51, G11C 706, H03K 522
Patent
active
054774977
ABSTRACT:
A semiconductor memory device which includes, in a first embodiment, a first PMOS transistor having a source electrode coupled to a signal transport line, a second PMOS transistor having a source electrode coupled to an inverted signal transport line, a drain electrode coupled to a gate electrode of the first PMOS transistor, and a gate electrode coupled to a drain electrode of the first PMOS transistor, a first current limiter connected between the drain electrode of the first PMOS transistor and a reference potential, a second current limiter connected between the drain electrode of the second PMOS transistor and the reference potential, a first constant current source connected between a supply voltage and the source electrode of the first PMOS transistor, and, a second constant current source connected between the supply voltage and the source electrode of the second PMOS transistor.
REFERENCES:
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patent: 3978459 (1976-08-01), Koo
patent: 4070590 (1978-01-01), Ieda et al.
patent: 4578781 (1986-03-01), Ogawa et al.
patent: 5036231 (1991-07-01), Kanbara
patent: 5097157 (1992-03-01), Jaffe et al.
patent: 5241504 (1993-08-01), Seevinck
Jung Chul-Min
Park Hee-Choul
Dinh Son
Donohoe Charles R.
Nelms David C.
Samsung Electronics Co,. Ltd.
Westerlund Robert A.
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