Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

365203, G11C 1140

Patent

active

045204624

ABSTRACT:
A semiconductor memory device in which a holding current continuously flows from word selection lines through memory cells to hold lines. Current mirror circuits are placed at the base of each of the transistors which switch discharge currents on and off in the word line discharge circuits. Thus, the discharge circuit is independent of the effects of the operation of other discharge circuits and the word line discharge circuit is less affected by power source fluctuations. This allows a semiconductor memory device having a high access speed.

REFERENCES:
patent: 4442509 (1984-04-01), Herndon

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