Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2009-10-22
2011-10-25
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S203000
Reexamination Certificate
active
08045409
ABSTRACT:
A semiconductor memory device includes a plurality of memory cells that are arranged at intersections of a word line with bit line pairs, a precharge circuit that is arranged for each of the bit line pairs and is configured to precharge each of the bit line pairs, and a Y-switch circuit that is arranged for each of the bit line pairs and is configured to select each of the bit line pairs. The semiconductor memory device further includes a mode switching unit that switches the normal mode and the test mode in accordance with a mode selection signal that is externally supplied, a plurality of individual control units that control operation of each of the precharge circuits in accordance with operation of each of the Y-switch circuits in the normal mode, and a block control unit that collectively turns off all of the precharge circuits in the test mode.
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Hirota Takuya
Yanagida Takao
Phung Anh
Renesas Electronics Corporation
Sughrue & Mion, PLLC
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