Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2009-11-06
2011-11-29
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189110, C365S225700
Reexamination Certificate
active
08068372
ABSTRACT:
A semiconductor memory device includes: a repair node; a fuse one side of which is coupled to the repair node; a pull-down unit configured to selectively transfer a ground voltage to the repair node; a pull-up unit configured to selectively transfer a driving voltage to another side of the fuse; and a voltage drop unit coupled between the pull-up unit and the fuse and configured to lower a voltage level of the driving voltage.
REFERENCES:
patent: 5914524 (1999-06-01), Komenaka
patent: 2011/0002176 (2011-01-01), Chang
patent: 1020080088171 (2008-10-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Mar. 10, 2011.
Hynix / Semiconductor Inc.
IP & T Group LLP
Nguyen Tan T.
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