Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1994-10-04

1996-11-12

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, G11C 1124

Patent

active

055746802

ABSTRACT:
A semiconductor memory device including a memory cell array which is formed of each of memory cells connected to intersection of a plurality of bit lines and word lines is provided such that, during designing the layout, a length of a storage electrode of the outermost memory cell in the memory cell array is longer than that of a storage electrode of an inner memory cell, or a spacing between two bit lines in the periphery of the memory cell array is longer than that between bit lines in the inner portion of the memory cell array, or a width of an active region of the outermost memory cell is wider than that of an active region of the inner memory cell, thereby forming a metal layer having an excellent step coverage by means of only the layout arrangement without additional processes while being not concerned about the structure of a storage electrode.

REFERENCES:
patent: 5504704 (1996-04-01), Sato et al.

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