Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-07-20
2008-08-05
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S203000, C365S104000, C365S196000
Reexamination Certificate
active
07408826
ABSTRACT:
A semiconductor memory device that includes a memory cell array having a plurality of memory cells that are connected between a bit line pair, which transfers data to the bit line pair, a precharge circuit for precharging the bit line pair to a precharge voltage level during a precharge period, and one or more bit line sense amplifiers which are connected between the bit line pair and detect a voltage difference of the bit line pair to amplify a level of the bit line pair. The semiconductor memory device includes one or more FINFETs.
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Choi Jong-Hyun
Kim Nam-Jong
Seo Dong-Il
Harness & Dickey & Pierce P.L.C.
Le Thong Q
Samsung Electronics Co,. Ltd.
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