Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-04-03

2007-04-03

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S226000

Reexamination Certificate

active

10733270

ABSTRACT:
When threshold voltages of constituent transistors are reduced in order to operate an SRAM circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the SRAM circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of MOS transistors in SRAM memory cells MC by controlling a potential of a source line ssl of the driver MOS transistors in the memory cells.

REFERENCES:
patent: 4764897 (1988-08-01), Kameyama et al.
patent: 5132929 (1992-07-01), Ochii
patent: 5986924 (1999-11-01), Yamada
patent: 6373760 (2002-04-01), Ohbayashi
patent: 6456555 (2002-09-01), Sim et al.
patent: 6549453 (2003-04-01), Wong
patent: 6556058 (2003-04-01), Ohbayashi et al.
patent: 6574161 (2003-06-01), Ooishi
patent: 6611451 (2003-08-01), Houston
patent: 6744659 (2004-06-01), Eby et al.
patent: 6791354 (2004-09-01), Mori et al.
patent: 6826074 (2004-11-01), Yamauchi
patent: 5-120882 (1993-05-01), None
patent: 7-296587 (1995-11-01), None
patent: 2002-197867 (2002-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3798434