Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-04-17

2007-04-17

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S369000

Reexamination Certificate

active

11052036

ABSTRACT:
A semiconductor device includes a silicon substrate, a channel region formed in a surface of the silicon substrate, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film, first gate side walls formed on the gate insulating film to sandwich the gate electrode in a gate length direction, second gate side walls which sandwich the gate electrode and the first gate side wall, first diffused layers formed on the surface of the silicon substrate to sandwich the channel region, second diffused layers which sandwich the channel region and the first diffused layer and have a larger depth than that of the first diffused layer, and low resistance layers which are formed between the first diffused layer and the second gate side wall and contain nitride, boride or carbide of Ti, Zr, Hf or Ta.

REFERENCES:
patent: 6909145 (2005-06-01), Cabral et al.
patent: 6977415 (2005-12-01), Matsuo
patent: 7135724 (2006-11-01), Chen et al.
patent: 11-297991 (1999-10-01), None

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