Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-08-29

2006-08-29

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Precharge

C365S204000, C365S230060, C365S210130

Reexamination Certificate

active

07099214

ABSTRACT:
There is provided a semiconductor memory device capable of performing high-speed reading even when the current capability of memory cells and transistors for charging is decreased, and a bit line capacitance is increased. In a sense amplifier, in addition to a P-type MOS transistor for charging, a P-type MOS transistor and a N-type MOS transistor are provided as a circuit for charging a selected bit line up to a switching level of a determination inverter included in a circuit for determining data of a memory cell, and a bit line is charged at high speed, whereby a read time is shortened.

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Japanese Office Action for Japanese Patent Application No. 2002-368744, mailed May 18, 2006.

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