Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-27
1993-08-17
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 68, 257 71, 257288, 257298, 257300, 257314, H01L 2702, H01L 2704
Patent
active
052371875
ABSTRACT:
In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region, which is a memory cell array region, a first MISFET having a gate electrode and source and drain regions; first and second capacitor electrodes and a dielectric film extended over a first insulating film and over the gate electrode; a second insulating film disposed on the second capacitor electrode; a third insulating film interposed between the first insulating film and first capacitor electrode; and a first wiring positioned on the second insulating film. In a second region of the device, which is a peripheral circuit region, there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a second insulating film on a third insulating film, the third insulating film being interposed between the first and second insulating films; and a second wiring on the second insulating film. The second wiring is formed by the same level conductor layer as that forming the first wiring. Similarly, the first through third insulating films of the first region are correspondingly associated with the first through third insulating films of the second region, respectively.
REFERENCES:
patent: 4937645 (1990-06-01), Ootsuka et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 5081515 (1992-01-01), Murata et al.
Asayama Kyoichiro
Endo Kazuya
Kaneko Yoshiyuki
Miyazawa Hiroyuki
Nagao Masaki
Hitachi , Ltd.
LaRoche Eugene R.
Nguyen Viet Q.
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