Semiconductor memory and method of producing the same

Details Semiconductor memory and method of producing the same Semiconductor memory and method of producing the same

2006-06-20

2006-06-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S397000, C438S239000

Reexamination Certificate

active

07064028

ABSTRACT:
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

REFERENCES:
patent: 6667502 (2003-12-01), Agarwal et al.
patent: 2001/0045587 (2001-11-01), Hosotani et al.
patent: 11-317504 (1999-11-01), None
patent: 2000-183311 (2000-06-01), None
patent: 2001-94066 (2001-04-01), None

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