Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-07-24
2007-07-24
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230060
Reexamination Certificate
active
11297380
ABSTRACT:
A semiconductor memory having memory cells each storing first data and second data in a memory cell array arranged in a column direction; a plurality of word lines connected to the memory cells in a row direction; and first and second bit lines, to which the first and second data are respectively read out, in the column direction. When one of the first and second bit lines changes from a first potential to a second potential lower than the first potential after data read out, the potential of the other bit line is changed from the second to the first potential, and if the electric potential of the selected bit line changes from the first to the second potential when data is read out, the other bit line is selected when the data is next read out, and, if the electric potential of the selected bit line maintains the first potential, the selected bit line is maintained selected even when the data is to be read out next.
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Tran Anthan
Zarabian Amir
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