Semiconductor memory

Static information storage and retrieval – Read/write circuit – Precharge

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Details

365230, G11C 1300

Patent

active

044882688

ABSTRACT:
A semiconductor memory includes memory cells and a discharge current source for quickly discharging electric charges, in the form of a discharge current, stored along the word lines. Each of the memory cells is comprised of a load transistor pair and a multi-emitter type detection transistor pair. The discharge current source controls the discharge current by means of a bias circuit formed in the discharge current source. The bias circuit control the value of the discharge current in accordance with the value of an inverse .beta. (current amplification factor) defined by the detection transistors.

REFERENCES:
patent: 4156941 (1979-05-01), Homma et al.
patent: 4168490 (1979-09-01), Stinehelfer

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