Static information storage and retrieval – Read/write circuit – Precharge
Patent
1982-09-28
1984-12-11
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Precharge
365230, G11C 1300
Patent
active
044882688
ABSTRACT:
A semiconductor memory includes memory cells and a discharge current source for quickly discharging electric charges, in the form of a discharge current, stored along the word lines. Each of the memory cells is comprised of a load transistor pair and a multi-emitter type detection transistor pair. The discharge current source controls the discharge current by means of a bias circuit formed in the discharge current source. The bias circuit control the value of the discharge current in accordance with the value of an inverse .beta. (current amplification factor) defined by the detection transistors.
REFERENCES:
patent: 4156941 (1979-05-01), Homma et al.
patent: 4168490 (1979-09-01), Stinehelfer
Fears Terrell W.
Fujitsu Limited
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