Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-03
2006-10-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S563000, C257SE29262, C257SE21629, C257SE21468
Reexamination Certificate
active
07115476
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a mask layer on a semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a semiconductor pillar, doping an impurity into the semiconductor substrate, thereby forming a first source/drain region in part of the semiconductor substrate, which is located under the semiconductor pillar, forming a gate insulating film on the semiconductor substrate, which contacts a side surface of the semiconductor pillar, forming a gate electrode on a side surface of the gate insulating film, forming a first insulating layer on the gate electrode, which contacts a side surface of the semiconductor pillar, and doping the impurity into the first insulating layer, thereby forming a second source/drain region in part of the semiconductor pillar, which is located on a side surface of the first insulating layer.
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Foley & Lardner LLP
Fourson George
Kabushiki Kaisha Toshiba
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