Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2011-03-29
2011-03-29
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S190000, C257SE33043
Reexamination Certificate
active
07915635
ABSTRACT:
For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.
REFERENCES:
patent: 2004/0262624 (2004-12-01), Akita et al.
patent: 2003-183100 (2003-07-01), None
Arpan Chakraborty et al., “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Applied Physics Letters, Nov. 29, 2004, vol. 85, No. 22, pp. 5143-5145.
Kuniyoshi Okamoto, et al., “Dislocation-Freem-Plane InGaN/GaN Light-Emitting Diodes onm-Plane GaN Single Crystals,” Japanese Journal of Applied Physics, 2006, vol. 45, No. 45, pp. L1197-L1199.
Akita Katsushi
Kasai Hitoshi
Miura Yoshiki
Motoki Kensaku
Drinker Biddle & Reath LLP
Sumitomo Electric Industries Ltd.
Tran Minh-Loan T
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