Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1997-04-02

1998-04-14

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257101, 257 94, 257103, H01S 319

Patent

active

057401934

ABSTRACT:
A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.

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patent: 5296718 (1994-03-01), Fujita et al.
patent: 5373521 (1994-12-01), Takahashi
patent: 5471067 (1995-11-01), Ikeda et al.

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