Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-06-05
1998-07-21
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438624, H01L 2144, H01L 2148
Patent
active
057834814
ABSTRACT:
A dielectric material is provided having air gaps which form during dielectric deposition between horizontal or vertical spaced conductors. The dielectric is deposited upon a polyimide, wherein the polyimide is placed over and between an underlying level of conductors. As the overlying dielectric is deposited on the polyimide, the polyimide material outgasses to form air separation between the polyimide and dielectric. Air separation is particularly prevalent in regions between closely spaced conductors and in high elevational areas directly above each conductor. The dielectric deposition process preferably includes two deposition cycles. A first deposition temperature is used to force significant outgassing, and a second deposition cycle is needed to close any and all keyhole openings which might exist between closely spaced conductors. A combination of polyimide, air gaps (air-filled cavities) and deposited dielectric forms an inter-level dielectric structure having a low dielectric permittivity or dielectric constant in critical conductor spaces.
REFERENCES:
patent: 5310700 (1994-05-01), Lien et al.
patent: 5382547 (1995-01-01), Sultan et al.
patent: 5403780 (1995-04-01), Jain et al.
patent: 5470793 (1995-11-01), Kalnitshy
patent: 5641712 (1997-06-01), Grivna et al.
Bandyopadhyay Basab
Brennan William S.
Dawson Robert
Fulford Jr. H. Jim
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Dutton Brian
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