Semiconductor interconnect interface processing by high pressure

Details Semiconductor interconnect interface processing by high pressure Semiconductor interconnect interface processing by high pressure

1999-01-05

2000-06-27

Smith, Matthew

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438642, 438643, 438656, 438685, 427531, 427597, H01L 2144

Patent

active

060806699

ABSTRACT:
A method is provided for forming metal layers in semiconductor channels or vias by using a very high pressure ionized metal deposition technique which results in improved sidewall step coverage with enhanced subsequent filling of the channel or vias by conductive materials. To obtain the very high pressure in excess of 100 mT, the plasma coil power is increased and the gas flow is increased while maintaining a constant pumping feed in the ionized metal deposition equipment.

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Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, p. 173, 1986 no month.

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