Semiconductor integrated circuits with power reduction mechanism

Details Semiconductor integrated circuits with power reduction mechanism Semiconductor integrated circuits with power reduction mechanism

1997-02-10

1998-10-20

Santamauro, Jon

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Signal level or switching threshold stabilization

326 17, 326 98, H03K 19017

Patent

active

058251987

ABSTRACT:
This invention is to reduce the power dissipation of a semiconductor integrated circuit chip when it is operated at an operating voltage of 2.5 V or below. To achieve the object, a switching element is provided in each circuit block within the semiconductor integrated circuit chip. The constants of the switching element are set so that the leak current in the switching element of each circuit block in their off-state is smaller than the subthreshold current of the MOS transistors within the corresponding circuit block. The active current is supplied to the active circuit blocks, while the switching elements of the non-active circuit blocks are turned off. Thus, the dissipation currents of the non-active circuit blocks are limited to the leak current value of the corresponding switching elements. As a result, the sum of the dissipation currents of the non-active circuit blocks is made smaller than the active current in the active circuit blocks. Since the dissipation currents of the non-active circuit blocks can be reduced while the active current is caused to flow in the active circuit blocks, the power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

REFERENCES:
patent: 4772811 (1988-09-01), Fujioka et al.
patent: 5274601 (1993-12-01), Kawahana et al.
patent: 5408144 (1995-04-01), Sakata et al.
patent: 5486774 (1996-01-01), Douseki et al.
patent: 5521527 (1996-05-01), Sakata et al.
patent: 5557620 (1996-09-01), Miller, Jr. et al.
patent: 5614847 (1997-03-01), Kawahana et al.
SN 08/045,792 filed Apr. 14, 1993, abondanced.

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