Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-25
2006-07-25
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S197000
Reexamination Certificate
active
07081649
ABSTRACT:
A technology for a semiconductor integrated circuitry allows each of the DRAM memory cells to be divided finely so as to be more highly integrated and operate faster. In a method of manufacturing such a semiconductor integrated circuit, at first, gate electrodes7are formed via a gate insulating film6on the main surface of a semiconductor substrate1, and on side surfaces of each of the gate electrodes there is formed a first side wall spacer14composed of silicon nitride and a second side wall spacer15composed of silicon oxide. Then, in the selecting MISFET Qs in the DRAM memory cell area there are opened connecting holes19and21in a self-matching manner with respect to the first side wall spacers14and connecting portion is formed connecting a conductor20to a bit line BL. In addition, in the N channel MISFETs Qn1and Qn2, and in the P channel MISFET Qp1in areas other than the DRAM memory cell area, high density N-type semiconductor areas16and16bare formed, as well as a high density P-type semiconductor area17is formed in a self-matching manner with respect to the second side wall spacers15.
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Hashimoto Syunichi
Kojima Masayuki
Kuroda Kenichi
Matsuda Nozomu
Moniwa Masahiro
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Hitachi ULSI Systems Co. Ltd.
Le Thao P.
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