Semiconductor integrated circuit, method and program for...

Details Semiconductor integrated circuit, method and program for... Semiconductor integrated circuit, method and program for...

2005-08-23

2005-08-23

Do, Thuan (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000, C716S030000, C438S017000

Reexamination Certificate

active

06934923

ABSTRACT:
A semiconductor integrated circuit that is well-balanced between increased operating speed and decreased power consumption caused by a leakage current. The gate cells of the circuit comprised of low threshold voltage MOSs are used for logic gates provided with three or more inputs, and gate cells comprised of high threshold voltage MOSs are generally used for logic gates provided with one or two inputs, sometimes on a case-by-case basis.

REFERENCES:
patent: 6380764 (2002-04-01), Katoh et al.
patent: 6563180 (2003-05-01), Ishibashi et al.
patent: 2004/0053429 (2004-03-01), Muranaka
patent: 11-195976 (1997-12-01), None

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