Semiconductor integrated circuit including a DRAM and an...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257S296000, C257S775000

Reexamination Certificate

active

11504070

ABSTRACT:
A semiconductor device including an interlayer insulation film formed on a substrate so as to cover first and second regions defined on the substrate, and a capacitor formed over the interlayer insulation film in the first region, wherein the interlayer insulation film includes, in the first region, a stepped part defined by a groove having a bottom surface lower in level than a surface of the interlayer insulation film in the second region.

REFERENCES:
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patent: 5406103 (1995-04-01), Ogawa
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patent: 5945702 (1999-08-01), Nakanishi
patent: 6020644 (2000-02-01), Tanigawa
patent: 6124622 (2000-09-01), Tsutsumi
patent: 6130102 (2000-10-01), White, Jr. et al.
patent: 6194758 (2001-02-01), Tanaka et al.
patent: 7221013 (2007-05-01), Goto et al.
patent: 59-200453 (1984-11-01), None
patent: 2-177558 (1990-07-01), None
patent: 4-348568 (1992-12-01), None
patent: 6-104258 (1994-04-01), None
patent: 06-283681 (1994-10-01), None
patent: 7-235616 (1995-09-01), None
Rudolf F. Graf: “Dictionary of Electronics,” 1999, Reed Elsevier, 7thEd., 4 pages (including p. 96).

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