Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Signal level or switching threshold stabilization
Reexamination Certificate
2007-11-06
2007-11-06
Tran, Anh Q. (Department: 2819)
Electronic digital logic circuitry
Signal sensitivity or transmission integrity
Signal level or switching threshold stabilization
C326S119000, C326S121000
Reexamination Certificate
active
11238975
ABSTRACT:
A semiconductor integrated circuit includes a CMOS controlled inverter consisting of series-connected PMOS and NMOS transistors. The source of the NMOS transistor is coupled to a ground line through an additional NMOS transistor for power gating of voltage VSS. The source of the PMOS transistor can be coupled to a power supply line through an additional PMOS transistor for power gating of voltage VDD. The inverter receives an input signal IN and its complementary version that has transitioned earlier than the input signal. In response to the input signal, the inverter produces an output signal. A NAND gate that receives the output signal and the complementary input signal controls the power gating NMOS transistor. A NOR gate that receives the output signal and the complementary input signal controls the power gating PMOS transistor. The power gating to the CMOS inverter is performed by feedback of the output signal and the complementary input signal, with the result that current leakage reduction through the CMOS controlled inverter is achieved. A self leakage reduction with power gating transistors is applicable to another type of logic gates such as NAND, NOR and Exclusive-OR, AND, OR.
REFERENCES:
patent: 5486774 (1996-01-01), Douseki et al.
patent: 5751651 (1998-05-01), Ooishi
patent: 6515521 (2003-02-01), Kono et al.
patent: 6696865 (2004-02-01), Horiguchi et al.
patent: 2006/0012397 (2006-01-01), Cooper
patent: 2006/0055424 (2006-03-01), Park et al.
Horiguchi et al., “Switched-Source-Impedance CMOS Circuit for Low Standby Subthreshold Current Giga-Scale LSI's”,IEEE Journal of Solid-State Circuits, vol. 28, No. 11, Nov. 1993, pp. 1131-1135.
Borden Ladner Gervais LLP
Masaid Technologies Incorporated
Shin Hung
Tran Anh Q.
LandOfFree
Semiconductor integrated circuit having current leakage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit having current leakage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit having current leakage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3861045