Semiconductor integrated circuit devices having contacts...

Details Semiconductor integrated circuit devices having contacts... Semiconductor integrated circuit devices having contacts...

2008-05-20

2011-11-08

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257S331000, C257S332000, C257S333000, C257S334000, C257S905000, C257S906000, C257S907000, C257S908000, C257SE21646, C257SE27084, C257SE27091

Reexamination Certificate

active

08053831

ABSTRACT:
A memory cell of memory device, comprises an active region of a memory cell defined in a semiconductor substrate, and a conductive gate electrode in a trench of the active region. The gate electrode is isolated from the semiconductor substrate. An insulation layer is on the active region and on the conductive gate electrode. A conductive contact is in the insulation layer on the active region at a side of the gate electrode and isolated from the gate electrode. The contact has a first width at a top portion thereof and a second width at a bottom portion thereof, the first width being greater than the second width. The contact is formed of a single-crystal material.

REFERENCES:
patent: 6180453 (2001-01-01), Sung et al.
patent: 6521508 (2003-02-01), Cheong et al.
patent: 2003/0068857 (2003-04-01), Shukuri et al.
patent: 2004/0063313 (2004-04-01), Shiratake et al.
patent: 2005/0095794 (2005-05-01), Park
patent: 2005/0127437 (2005-06-01), Inagawa et al.
patent: 2006/0006410 (2006-01-01), Lee et al.
patent: 2006/0138477 (2006-06-01), Suh

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