Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-06-21
2011-06-21
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257S607000
Reexamination Certificate
active
07964484
ABSTRACT:
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.
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Ishibashi Koichiro
Kitai Naoki
Nakamichi Masaru
Nishida Akio
Osada Kenichi
Hitachi ULSI Systems Co. Ltd.
Lee Calvin
Marquez, Esq Juan Carlos A.
Renesas Electronics Corporation
Stites & Harbison PLLC
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