Semiconductor integrated circuit device with reduced leakage...

Details Semiconductor integrated circuit device with reduced leakage... Semiconductor integrated circuit device with reduced leakage...

2008-04-09

2009-08-04

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S241000, C438S258000

Reexamination Certificate

active

07569881

ABSTRACT:
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

REFERENCES:
patent: 6133586 (2000-10-01), Ohkubo
patent: 6307236 (2001-10-01), Matsuzaki et al.
patent: 6342413 (2002-01-01), Masuoka et al.
patent: 6713779 (2004-03-01), Tezuka et al.
patent: 2001/0017798 (2001-08-01), Ishii
patent: 9-135029 (1996-09-01), None
patent: 11-289020 (1998-04-01), None
patent: 2000-357962 (1999-09-01), None
The Office Action from Japanese Patent Office dated Nov. 19, 2008 regarding Japanese Patent Application No. 2002-017840, in Japanese.

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