Semiconductor integrated circuit device with reduced leakage...

Details Semiconductor integrated circuit device with reduced leakage... Semiconductor integrated circuit device with reduced leakage...

2006-02-14

2006-02-14

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S320000, C257S321000, C438S241000, C438S258000

Reexamination Certificate

active

06998674

ABSTRACT:
The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

REFERENCES:
patent: 6133586 (2000-10-01), Ohkubo
patent: 6307236 (2001-10-01), Matsuzaki et al.
patent: 2001/0017798 (2001-08-01), Ishii
patent: 9-135029 (1996-09-01), None
patent: 2000-357962 (1999-09-01), None

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