Semiconductor integrated circuit device with large internal bus

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36523006, G11C 700

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06163493&

ABSTRACT:
A first internal power supply circuit receiving an external power supply voltage for generating a first internal power supply voltage and a second internal power supply circuit receiving the external power supply voltage for generating a second internal power supply voltage are provided within a DRAM. A sense amplifier operates by the first internal power supply voltage. A write driver and a GIO line precharge circuit operate by the second internal power supply voltage. A peripheral circuit operates by the external power supply voltage. As a result, the sense amplifier and the peripheral circuit will not be affected by the operation of the write driver and the GIO line precharge circuit.

REFERENCES:
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patent: 5789808 (1998-08-01), Yamasaki et al.
patent: 5822264 (1998-10-01), Tomishima et al.
patent: 5917765 (1999-06-01), Morishita et al.
"A Multimedia 32b RISC Microprocessor with 16Mb DRAM" T. Shimizu et al., ISSCC 96, Feb. 1996, pp. 216-217.
"A Configurable DRAM Macro Design for 2112 Derivative Organizations to be Synthesized Using a Memory Generator", T. Yabe et al., ISCCC 98, Feb. 1998, pp. 72-73.

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