Semiconductor integrated circuit device in which influence of po

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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36518908, 365226, 36523003, 36523008, G11C 700, G11C 800

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active

058727370

ABSTRACT:
In a system chip, power supply lines and ground lines are provided independently for input/output buffer circuit, a logic circuit, memory cell array and so on. The word line is held at a negative potential when not selected. At an initial stage of sense amplifier operation, sense amplifier operates with external power supply potential Vcc directly supplied thereto, and after a prescribed time period, it operates receiving internal power supply potential Vcc as output from an internal voltage converting circuit.

REFERENCES:
patent: 5202855 (1993-04-01), Morton
patent: 5398207 (1995-03-01), Tsuchida et al.
patent: 5555215 (1996-09-01), Nakagome et al.
"Low Voltage Circuit Design Techniques for Battery-Operated and/or Giga-Scale DRAM's", Yamagata, et al, IEEE, vol. 30, No. 11, Nov. 1995, pp. 1183-1188.
"High-Speed/High-band Width Design Methodologies For On Chip DRAM Core Multimedia System LSIs", Tsuruda et al., pp. 265-268, IEEE 1996 Custom Integrated Circuits Conference, May 6, 1996.

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