Semiconductor integrated circuit device having minature multi-le

Details Semiconductor integrated circuit device having minature multi-le Semiconductor integrated circuit device having minature multi-le

1996-08-05

1998-02-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257386, 257752, 257759, 257774, H01L 2348, H01L 2352

Patent

active

057172510

ABSTRACT:
After a pattern transfer of a first pattern image to a lower photo-sensitive layer of first material, a second pattern image is transferred to an upper photo-sensitive layer of second material higher in photo-sensitivity than the first material, and the first image and the second image are concurrently developed so as to form a composite etching mask through a simple process.

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patent: 5173442 (1992-12-01), Carey
patent: 5404046 (1995-04-01), Matsumoto et al.
patent: 5451804 (1995-09-01), Lur et al.
patent: 5471093 (1995-11-01), Cheung
patent: 5550405 (1996-08-01), Cheung et al.
patent: 5616959 (1997-04-01), Jeng
patent: 5625232 (1997-04-01), Numata et al.
patent: 5629557 (1997-05-01), Yamaha
patent: 5661344 (1997-08-01), Havemann et al.
"Dual Damascene: A Ulsi Wiring Technology"; Kaanta et al IEEE 1991, VMIC Conference, Jun. 11-12, pp. 144-153.

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