Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-02
1997-08-12
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257301, 257380, 257385, 257903, H01L 27108, H01L 2976, H01L 2711
Patent
active
056568363
ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and the word lines are individually formed of different conductive layers. The drive MISFETs and the transfer MISFETs are individually arranged to cross each other in the gate length direction. The word lines are extended in the gate length direction of the gate electrodes of the drive MISFETs and caused to cross the gate electrodes of the drive MISFETs partially.
The two transfer MISFETs of the memory cell have their individual gate electrodes connected-with two respective word lines spaced from each other and extended in an identical direction. The region defined by the two word lines is arranged therein with the two drive MISFETs and the source lines.
REFERENCES:
patent: 4525811 (1985-07-01), Masuoka
Hashiba Soichiro
Hashimoto Naotaka
Hiraishi Atsushi
Ikeda Shuji
Ishibashi Koichiro
Hitachi , Ltd.
Martin Wallace Valencia
Saadat Mahshid D.
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