Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S262000, C438S593000
Reexamination Certificate
active
07105409
ABSTRACT:
A semiconductor integrated circuit device with third gates comprising second conduction type source/drain diffusion layer regions205formed first conduction type well201, floating gates203bformed on semiconductor substrate200through an insulator film202, control gates211aformed on floating gates203bthrough nitrogen-introduced silicon oxide film210aand third gates207adifferent from the floating gates and the control gates, formed through the semiconductor substrates, the floating gates, the control gates and the insulator film, where the third gates are formed as filled in gaps between the floating gates existing in a vertical direction to word lines and channels and the height of third gates207athus formed is made lower than that of floating gates203b, has improved reduction of memory cell size and operating speed and improved reliability after programming/erasing cycles.
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Goto Yasushi
Kimura Katsutaka
Kobayashi Takashi
Kume Hitoshi
Kurata Hideaki
Miles & Stockbridge P.C.
Renesas Technology Corp.
Trinh Michael
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