Semiconductor integrated circuit device and method of...

Details Semiconductor integrated circuit device and method of... Semiconductor integrated circuit device and method of...

2005-03-01

2005-03-01

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S195000, C438S199000, C438S217000, C438S301000

Reexamination Certificate

active

06861304

ABSTRACT:
A semiconductor integrated circuit device wherein plural field effect transistors having different threshold values are integrated on one chip by forming plural gate electrodes of silicon-germanium mixed crystals having different germanium contents. By varying the germanium content of the gate electrode material, a work function with respect to the channel region can be varied, so a semiconductor integrated circuit device wherein plural field effect transistors having different threshold voltage values are integrated on one chip can be manufactured.

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