Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-01
2005-02-01
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S643000, C438S653000, C438S687000, C438S692000
Reexamination Certificate
active
06849535
ABSTRACT:
A semiconductor device comprises a semiconductor substrate; a first insulating film overlying a surface of the semiconductor substrate, an upper surface of the first insulating film being nitrided; a first copper-embedded interconnection embedded in the first insulating film, and which first copper-embedded interconnection contains copper as a main component; a copper nitride film overlying an upper surface of the first copper-embedded interconnection; a cap insulating film overlying an upper surface of the first insulating film and an upper surface of the copper nitride film; and a second insulting film overlying the cap insulating film.
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Noguchi Junji
Ohashi Naofumi
Owada Nobuo
Saito Tatsuyuki
Takeda Ken'ichi
Miles & Stockbridge P.C.
Tran Minh-Loan
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