Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-21
2006-11-21
Wojciechowicz, Edward (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S368000
Reexamination Certificate
active
07138311
ABSTRACT:
A submicron CMOS transistor is mounted on the same substrate together with an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor, without degrading the characteristics of these components. When a punch-through stopper area is formed on a main surface side of a semiconductor substrate, an area in which an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor is formed is masked, and for example, an ion injection is then carried out. Thus, a punch-through stopper area is formed in the area in which a submicron CMOS transistor is formed, while preventing the formation of a punch-through stopper area in the area in which an analog CMOS transistor, a high voltage-resistance MOS transistor, a bipolar transistor, a diode, or a diffusion resistor is formed.
REFERENCES:
patent: 4403395 (1983-09-01), Curran
patent: 5342802 (1994-08-01), Kubokoya et al.
patent: 5409848 (1995-04-01), Han et al.
patent: 5516711 (1996-05-01), Wang
patent: 5541125 (1996-07-01), Williams et al.
patent: 5830789 (1998-11-01), Lien et al.
patent: 5877531 (1999-03-01), Fukatsu et al.
patent: 5899732 (1999-05-01), Gardner et al.
patent: 5963799 (1999-10-01), Wu
patent: 6020227 (2000-02-01), Bulucea
patent: 6096591 (2000-08-01), Gardner et al.
patent: 6157062 (2000-12-01), Vasanth et al.
patent: 6238982 (2001-05-01), Krivokapic et al.
patent: 6294416 (2001-09-01), Wu
patent: 6309921 (2001-10-01), Ema et al.
patent: 6329693 (2001-12-01), Kumagai
patent: 6355531 (2002-03-01), Mandelman et al.
patent: 6462385 (2002-10-01), Kumagai
patent: 6476430 (2002-11-01), Schmitz et al.
patent: 2002/0197812 (2002-12-01), Fan
patent: 0 827 205 (1998-03-01), None
patent: 60-10780 (1985-01-01), None
patent: 60-105277 (1985-06-01), None
patent: 61-190983 (1986-08-01), None
Dolny G. et al., “Complementary DMOS/BICMOS Technology for Power IC Applications,” Dec. 11, 1988, IEEE, pp. 796-799.
Fuji Electric & Co., Ltd.
Rossi Kimms & McDowell LLP
Wojciechowicz Edward
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