Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-15
2009-11-03
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21008
Reexamination Certificate
active
07611942
ABSTRACT:
A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.
REFERENCES:
patent: 5970362 (1999-10-01), Lyons et al.
patent: 6156594 (2000-12-01), Gris
patent: 6180462 (2001-01-01), Hsu
patent: 6410387 (2002-06-01), Cappelletti et al.
patent: 2002/0022314 (2002-02-01), Tuan et al.
patent: 2002/0041526 (2002-04-01), Sugita et al.
patent: 2000-164835 (2000-06-01), None
patent: 2000-269449 (2000-09-01), None
Fang Xiaudong
Minami Shin-ichi
Oowada Fukuo
Antonelli, Terry Stout & Kraus, LLP.
Ghyka Alexander G
Patel Reema
Renesas Technology Corp.
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