Semiconductor integrated circuit device and a manufacturing...

Details Semiconductor integrated circuit device and a manufacturing... Semiconductor integrated circuit device and a manufacturing...

2006-10-18

2009-08-18

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S265000, C438S759000

Reexamination Certificate

active

07575967

ABSTRACT:
In a manufacturing method for a semiconductor device, a first impurity diffusion layer for a low impurity concentration drain of a second conductivity type is formed within a semiconductor layer of a first conductivity type, and a second impurity diffusion layer for a high impurity concentration drain of the second conductivity type is formed adjacent to the first impurity diffusion layer, with the second impurity diffusion layer having a higher impurity concentration than the first impurity diffusion layer. An interlayer insulating film is formed on the semiconductor substrate layer. A drain extension region having a high thermal conductivity is formed on a surface of the first impurity diffusion layer. A contact hole is formed through the interlayer insulating film and up to the second impurity diffusion layer. A wiring metal layer is then deposited into the contact hole to form therein a drain electrode that is electrically connected to the second impurity diffusion layer and that is disposed apart from and not in contact with the drain extension region.

REFERENCES:
patent: 6627502 (2003-09-01), Cho
patent: 2004/0087075 (2004-05-01), Wang et al.
patent: 2005/0179098 (2005-08-01), Chan et al.

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