Semiconductor integrated circuit device and a manufacturing...

Details Semiconductor integrated circuit device and a manufacturing... Semiconductor integrated circuit device and a manufacturing...

2011-06-21

2011-06-21

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000, C438S265000, C438S759000

Reexamination Certificate

active

07964457

ABSTRACT:
Provided is a manufacturing method for a power management semiconductor device or an analog semiconductor device both including a CMOS. According to the method, a substance having high thermal conductivity is additionally provided above a semiconductor region constituting a low impurity concentration drain region so as to expand the drain region, which contributes to a promotion of thermal conductivity (or thermal emission) in the drain region during a surge input and leads to suppression of local temperature increase, to thereby prevent thermal destruction. Therefore, it is possible to manufacture a power management semiconductor device or an analog semiconductor device with the extended possibility of transistor design.

REFERENCES:
patent: 6627502 (2003-09-01), Cho
patent: 7575967 (2009-08-01), Saitoh et al.
patent: 2004/0087075 (2004-05-01), Wang et al.
patent: 2005/0179098 (2005-08-01), Chan et al.

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