Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2010-02-16
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257S308000, C257S304000, C257S309000, C257S532000, C257S908000, C257SE29010, C257SE29058, C257SE29065, C257S758000, C257SE21008, C438S253000, C361S306100, C361S306200
Reexamination Certificate
active
07663175
ABSTRACT:
A semiconductor integrated circuit device provided with a plurality of power supply wire layers including a first potential power supply wire and a second potential power supply wire formed in different layers. At least one capacitor contact wire extends from one of the first and second potential power supply wires toward the other one of the first and second potential power supply wires so as to form a capacitor between each capacitor contact wire and its surrounding wires.
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Fujimura Keiichi
Hirose Masahito
Komura Kazufumi
Nagato Masaki
Nakamura Takayoshi
Chen David Z
Fujitsu Microelectronics Limited
Jackson, Jr. Jerome
Westerman Hattori Daniels & Adrian LLP
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