Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S303000, C257S306000, C257S308000, C257S304000, C257S309000, C257S532000, C257S908000, C257SE29010, C257SE29058, C257SE29065, C257S758000, C257SE21008, C438S253000, C361S306100, C361S306200

Reexamination Certificate

active

07663175

ABSTRACT:
A semiconductor integrated circuit device provided with a plurality of power supply wire layers including a first potential power supply wire and a second potential power supply wire formed in different layers. At least one capacitor contact wire extends from one of the first and second potential power supply wires toward the other one of the first and second potential power supply wires so as to form a capacitor between each capacitor contact wire and its surrounding wires.

REFERENCES:
patent: 6100591 (2000-08-01), Ishii
patent: 6429474 (2002-08-01), Gambino et al.
patent: 6570210 (2003-05-01), Sowlati et al.
patent: 6949781 (2005-09-01), Chang et al.
patent: 7196363 (2007-03-01), Montagnana
patent: 2004/0031982 (2004-02-01), Devries et al.
patent: 2005/0259379 (2005-11-01), Bely et al.
patent: 2001-177056 (2001-06-01), None
patent: 2002-324841 (2002-11-01), None
patent: 2003-249559 (2003-09-01), None
patent: 2004-241762 (2004-08-01), None

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