Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2006-09-26
2006-09-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S226000, C365S230060
Reexamination Certificate
active
07113421
ABSTRACT:
The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.
REFERENCES:
patent: 6798688 (2004-09-01), Joshi
patent: 2003/0076705 (2003-04-01), Yamaoka et al.
patent: 2002-042476 (2000-07-01), None
Isoda Masanori
Maeda Noriaki
Nii Koji
Shimazaki Yasuhisa
Shinozaki Yoshihiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hoang Huan
Reed Smith LLP
Renesas Technology Corp.
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