Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-03-08
2005-03-08
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S190000
Reexamination Certificate
active
06865127
ABSTRACT:
The present invention provides a semiconductor integrated circuit device equipped with a memory circuit, which realizes speeding up of its operation in a simple configuration or realizes high reliability and enhancement of product yields in a simple configuration. A memory cell is selected from within a memory array having a plurality of memory cells by a selector or selection circuit. MOSFETs constituting a precharge circuit provided for signal lines for transferring a read signal therefrom to a main amplifier are respectively brought to an on state based on a memory cell select start signal transferred to the selection circuit and brought to an off state prior to the transfer of the read signal from the memory cell to thereby complete precharging, whereby NBTI degradation at standby is avoided.
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Hasegawa Masatoshi
Miyaoka Shuichi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Nguyen Tan T.
Reed Smith LLP
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