Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-27
1997-04-08
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257903, 257904, H01L 2976, H01L 2711
Patent
active
056190557
ABSTRACT:
A memory cell of the type employing a pair of cross-coupled CMOS inverters of a SRAM is disclosed in which the load MISFETs are stacked above the semiconductor substrate and over the drive MISFETs. Each load MISFET of a memory cell consists of a source, drain and channel region formed of a semiconductor strip, such as a polycrystalline silicon film strip, and a gate electrode consisting of a different layer conductive film than that of the drive MISFETs. In a memory cell having such a stacked arrangement, the source region and gate electrode of each load MISFET thereof are patterned to have a widely overlapping relationship with each other to form a capacitor element thereacross such that an increase in the overall capacitance associated with each of the memory cell storage nodes is effected thereby decreasing occurrence of soft error. The overlapping relationship for effecting the large capacitor element across the source and gate of the respective load MISFETs is provided by an ion implanting scheme of a p-type impurity into the semiconductor strip. A separate mask for ion-implantation for the formation of the source region of the load MISFET is added followed by the addition of the gate electrode thereof in a manner so as to have a widely overlapping relationship with that of the source region.
REFERENCES:
patent: 4476475 (1984-10-01), Naem et al.
patent: 4555721 (1985-11-01), Bansal et al.
patent: 4571609 (1986-02-01), Hatano
patent: 4653025 (1987-03-01), Minato et al.
patent: 4656731 (1987-04-01), Lam et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4794561 (1988-12-01), Hsu
patent: 4803534 (1989-02-01), Koike et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4841481 (1989-06-01), Ikeda et al.
patent: 4890148 (1989-12-01), Ikeda et al.
patent: 4894801 (1990-01-01), Saito et al.
patent: 5194749 (1993-03-01), Meguro et al.
IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1983, pp. 273-277.
Charles Cohen, 3-d IC May Augur Denser VLSI Circuitry; Multiple Layers Are a Possibility; Sep. 22, 1983, p. 92, Electronics International.
Hashimoto Naotaka
Hashimoto Takashi
Honjou Shigeru
Kaga Toru
Koike Atsuyoshi
Hitachi , Ltd.
Loke Steven H.
LandOfFree
Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2399185