Semiconductor integrated circuit device

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

365203, 307269, G11C 700

Patent

active

048071900

ABSTRACT:
A dynamic RAM is provided in which an output voltage of a booster circuit for forming a word line selection timing signal is rendered greater than a power source potential and less than a predetermined potential by providing voltage limitation means, thereby preventing destruction of circuit elements receiving the output voltage.

REFERENCES:
patent: 4503343 (1985-03-01), Ohuchi
patent: 4639622 (1987-01-01), Goodwin et al.
patent: 4649523 (1987-03-01), Holder, Jr. et al.
patent: 4678941 (1987-07-01), Chao et al.

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