Semiconductor integrated circuit and semiconductor...

Details Semiconductor integrated circuit and semiconductor... Semiconductor integrated circuit and semiconductor...

2008-05-20

2008-05-20

Tran, Anh Q. (Department: 2819)

Electronic digital logic circuitry

Signal sensitivity or transmission integrity

Signal level or switching threshold stabilization

C326S112000, C326S119000

Reexamination Certificate

active

07375547

ABSTRACT:
An SOI structure semiconductor integrated circuit is disclosed that reduces the number of power supply wires setting substrate potential of a semiconductor element and reduces power consumption. With an SOI structure semiconductor integrated circuit, a first circuit block51does not include a critical path and a second circuit block61does include a critical path. First power supply wiring28supplies a first power supply and second power supply wiring29supplies a second power supply of a high-voltage compared to the first power supply. A wiring section71(P-channel first substrate power supply wiring and P-channel first power supply wiring) supplies the first power supply as a substrate power supply for P-channel elements of the first circuit block51and a source power supply. A wiring section91(P-channel second substrate power supply wiring) supplies the first power supply as a substrate power supply for P-channel elements of a second circuit block61, and a wiring section81(P-channel second power supply wiring) supplies the second power supply as a source power supply for P-channel elements of the second circuit block61.

REFERENCES:
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patent: 6232793 (2001-05-01), Arimoto et al.
patent: 6643208 (2003-11-01), Yamagata et al.
patent: 6831483 (2004-12-01), Shimazaki et al.
patent: 2001-015692 (2001-01-01), None
patent: 2001-332695 (2001-11-01), None
patent: 2004-207694 (2004-07-01), None
English Language Abstract of JP 2001-015692, no month 2001.
R. Puri et al., “Pushing ASIC Performance in a Power Envelope,” DAC 2003, Jun. 2-6, 2003.
English Language Abstract of JP 2004-207694, no month 2004.
English Language Abstract of JP 2001-332695, no month 2001.

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