Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-02
2011-11-01
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE23131, C438S587000, C438S589000
Reexamination Certificate
active
08049274
ABSTRACT:
A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate, at least one connecting trench connecting at least two of the plurality of trenches to each other, a plurality of trench transistors including a plurality of gate electrodes, each gate electrode partially filling a corresponding trench, and a capping layer filling the at least one connecting trench.
REFERENCES:
patent: 7449354 (2008-11-01), Marchant et al.
patent: 10-2004-0093299 (2004-11-01), None
patent: 10-2005-0081758 (2005-08-01), None
patent: 10-2006-0060282 (2006-06-01), None
patent: 10-2007-0002649 (2007-01-01), None
Kim Dae-Ik
Kim Yong-Il
Landau Matthew
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Snow Colleen E
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