Semiconductor integrated circuit and manufacturing method thereo

Details Semiconductor integrated circuit and manufacturing method thereo Semiconductor integrated circuit and manufacturing method thereo

1998-01-30

2000-08-29

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438250, 438253, 438329, 438330, 438382, 393396, 393486, H01L 2170

Patent

active

061107727

ABSTRACT:
A semiconductor IC including a resistance element on a circuit substrate. The resistance element includes a resistance layer formed on an insulating layer. The resistance layer is formed using a Si layer obtained by forming an a-Si layer, doping the a-Si layer with impurities, and heating the doped a-Si layer to diffuse the impurities while substantially preserving the fineness of the a-Si layer surface. Preferably, a SiN layer is provided lying beneath the resistance layer. A capacitor may be integrated on the same circuit substrate where the resistance element is formed. In this case, a lower electrode, a SiN dielectric layer, and an upper electrode are formed in this order to constitute a capacitor. The SiN dielectric layer of the capacitor is formed extending from a capacitor formation region to another region, so that the resistance layer of the resistance element is formed on the extending SiN dielectric layer. The lower and upper electrodes of the capacitor may be formed using an a-Si layer, similar to the resistance layer.

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