Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2008-12-09

2010-11-30

Barnie, Rexford N (Department: 2819)

Electronic digital logic circuitry

Significant integrated structure, layout, or layout...

Field-effect transistor

C257S208000, C257S371000, C331S057000

Reexamination Certificate

active

07843227

ABSTRACT:
The present invention is directed to reduce the chip area of a semiconductor integrated circuit. A semiconductor integrated circuit of the invention includes a first transistor, a second transistor disposed adjacent to the first transistor along a Y axis, and a third transistor disposed adjacent to the second transistor along an X axis. The semiconductor integrated circuit further includes a fourth transistor disposed adjacent to the third transistor along the Y axis and disposed adjacent to the first transistor along the X axis. The first to fourth transistors share a well, and an output signal of the first transistor and an output signal of the second transistor have phases opposite to each other. An output signal of the second transistor and an output signal of the third transistor have phases opposite to each other. An output of the third transistor and an output signal of the fourth transistor have phases opposite to each other. The outputs of the transistors act so as to cancel out fluctuations in well potential.

REFERENCES:
patent: 2007/0063288 (2007-03-01), Furuta et al.
patent: 2008/0142898 (2008-06-01), Watanabe et al.
patent: 2003-309178 (2003-10-01), None
patent: 2004-319855 (2004-11-01), None

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