Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-01-31
2009-06-16
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S434000, C257S680000, C257SE31117, C257SE31127
Reexamination Certificate
active
07547955
ABSTRACT:
A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.
REFERENCES:
patent: 6556349 (2003-04-01), Cox et al.
patent: 6583438 (2003-06-01), Uchida
patent: 2002/0163054 (2002-11-01), Suda
patent: 9-260624 (1997-10-01), None
patent: 2003-244558 (2003-08-01), None
Fukuda Toshiyuki
Komatsu Tomoko
Minamio Masanori
Liu Benjamin Tzu-Hung
McDermott Will & Emery LLP
Ngo Ngan
Panasonic Corporation
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