Semiconductor image sensing element and fabrication method...

Details Semiconductor image sensing element and fabrication method... Semiconductor image sensing element and fabrication method...

2006-10-02

2010-11-16

Jerabek, Kelly L (Department: 2622)

Television

Camera, system and detail

Optics

C359S237000, C438S064000

Reexamination Certificate

active

07834926

ABSTRACT:
A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

REFERENCES:
patent: 7616250 (2009-11-01), Watanabe et al.
patent: 2004/0032523 (2004-02-01), Hartlove et al.
patent: 2005/0041134 (2005-02-01), Takayama
patent: 2005/0219398 (2005-10-01), Sato et al.
patent: 2005/0275741 (2005-12-01), Watanabe et al.
patent: 5-102449 (1993-04-01), None
patent: 2004-111792 (2004-04-01), None

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